EMNL Research Facilities
  
 

Surfaces and Interfaces Laboratory (320 Caldwell Laboratory)

Interdisciplinary Nanoscale Materials Laboratory (020 Dreese Laboratory)

Nanoscale SIMS and MBE Facility (020 Dreese Laboratory)

Cleanroom Facilities (Dreese Laboratory)


 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 


Surfaces and Interfaces Laboratory

The Surfaces and Interfaces Laboratory at The Ohio State University is equipped with two ultra-high vacuum (UHV) chambers equipped with many types of analysis techniques, as well as a low-temperature photoluminescence spectroscopy (PL) setup using a 325 nm HeCd laser and 633 nm HeNe laser and a Surface Photovoltage Spectroscopy facility.  The first chamber is interlocked with an additional process chamber for remote-plasma surface treatments and thermal processing.  The analysis techniques for this chamber include low energy electron nanoscale spectroscoopy (LEEN) with a 0.5 - 5 kV electron gun system, x-ray photoemission spectroscopy (XPS) with Mg/Zr dual anode source, Auger electron spectroscopy (AES) with a double-pass cylindrical mirror analyzer, and low energy electron diffraction (LEED) for the characterization of surface atomic ordering.  

 

 

 

The process chamber interlocked with the above UHV analysis chamber allows remote plasma processing of samples using a 13.56 MHz RF source.  Nitrogen, oxygen, and hydrogen plasma generation is possible with this system.  Thermal processing using a pyrometer or thermocouple to measure the specimen temperature is also possible.

        

 

 

 

 

 

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The second chamber includes two types of UHV metal evaporation systems: electron-beam evaporation and thermal evaporation for evaporation of Ti, Pt, Al, Au, and Ga, as well as a state-of-the-art LEEN spectroscopy system with UHV fiber-optic light collection and Oriel 260i with a high-resolution CCD detection system, Auger electron spectroscopy with Ar+ ion gun for Auger depth profiling, and LEED for analyzing surface atomic ordering.  LEEN spectroscopy can be performed from 180 nm – 1000 nm allowing characterization of important material systems such as AlN, GaN, and SiC.

    

 

 

 

pl_1Also, the photoluminescence facility is capable of  variable temperature photoluminescence from 10 - 300K with 325 nm, 40 mW HeCd laser and 633 nm HeNe laser excitation and high resolution light collection from an Oriel MS257 imaging spectrograph.  In addition to photoluminescence, a Surface Photovoltage Spectroscopy setup is available to analyze deep level defects in semiconductor materials with an analysis range of 1.5 – 4.0 eV. 

 



 

 

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Nanoscale Materials Laboratory

One of the new facilities extending our analysis techniques is a normal incidence, 1 - 25 kV  JEOL Auger Microprobe/SEM with a 5 nm minimum probe size for high spatial resolution secondary electron imaging and a 25nm minimum probe size for Auger electron imaging. This system has capabilities for spectral data, LEEN depth profile, line profile, secondary electron imaging, Auger electron imaging, Auger depth profiling (ADP), and wide area mapping of spectral features and morphology. It is equipped with high performance CLS optics and detection, i.e., 70% collection efficiency and 0.5 nm spectral resolution (2.4 meV  at 500 nm). There is an available UHV specimen stage has cryogenic capabilities ranging from 10 - 323 K for enhancing band edge features and probing thermal quenching effects. In addition to lateral and depth probe measurements, cross sectional measurements of full device structures can be performed with this instrumentation. This UHV SEM is interlocked to a process chamber for metallization, thermal processing, in situ cleaving, and chemical processing.

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Here is a view of the inside of the specimen analysis chamber.

 

 

The facility also contains a Physical Electronics time-of-flight secondary ion mass spectrometer (SIMS) for high mass resolution spectroscopy of electronic materials using its liquid metal ion gun (LMIG).  The system can perform SIMS imaging as well as SIMS depth profiles with O and Cs sputter sources.  The instrument will also be equipped with a scanning electron microscope and state-of-the-art fiber optic LEEN spectroscopy in the IR and UV with CCD detection.  Interlocked to the TOF-SIMS will be a surface analysis chamber equipped with an X-ray gun for X-ray photoemission spectroscopy (XPS) and also a custom molecular beam epitaxy (MBE) chamber with RHEED and LEED surface characterization capabilities.

     
 

 

 

 

 

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Cleanroom Facilities

The Ohio State University's Class 100/1000 clean room provides teaching and research facilities for Si microelectronic and III-V optoelectronic device fabrication. A portion of this clean room is dedicated to a Varian Gen II molecular beam epitaxy (MBE) III-V compound semiconductor growth chamber. This facility is directed by Professor Steven A. Ringel.  In the coming academic year, this facility will be further interlocked with additional UHV chambers for variable temperature scanning tunneling microscopy (STM), monochromatized XPS, CLS, and epi-metal growth. To see more, visit Professor Steven A. Ringel's EMDL webpage on .
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