1996 - 2002 Publications for the EMNLAB Research Group

1. X. Yang, A. D. Raisanen, L. J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, "Internal Photoemission and Deep Level Luminescence at ZnSe/GaAs Heterointerfaces," J. Vac. Sci. Technol. A14, 867 (1996).

2. X. Yang, A. D. Raisanen, L.J.Brillson, A. Franciosi, L. Vanzetti, L. Sorba, M. Grundmann and D. Bimberg, "Evolution of Deep Levels and Internal Photoemission with Annealing Temperature at ZnSe/GaAs Interfaces," J. Vac. Sci. Technol. A14, 2961 (1996).

3. X. Yang, L. J. Brillson, and K.-Y. Law, "Low Energy Cathodoluminescence Spectroscopy of SiO2 Nanoparticles," J. Vac. Sci. Technol. A15, 880 (1997).

4. X. Yang, A. D. Raisanen, A. Franciosi, L. Vanzetti, and L. Sorba, "Deep Level Formation and Heterojunction Band Offsets at ZnSe/GaAs Interfaces," Appl. Surf. Sci. 123/124, 289 (1998).

5. A.P.Young, L. J. Brillson, and J. Jones, "Low Energy Cathodoluminescence Spectroscopy of Etched 6H-SiC Surfaces," J. Vac. Sci. Technol. A17, 2692-2695 (1999).

6. A.P.Young, G.H.Jessen, R. Bandhu, L. J. Brillson, G. Lucovsky and H. Niimi, "Cathodoluminescence Measurements of Sub-Oxide Band-Tail and Amorphous Si Dangling Bond States at Ultrathin Si-SiO2 Interfaces," J. Vac. Sci. Technol. B16, 2177 (1998).

7. J. Schäfer, A.P.Young, L. J. Brillson, H. Niimi and G. Lucovsky, "Depth-Dependent Spectroscopic Defect Characterization of the Interface Between Plasma-Deposited SiO2 and Silicon," Appl. Phys. Lett. 73, 791-793 (1998).

8. A. P. Young, J. Schäfer, G. H. Jessen, R. Bandhu, L. J. Brillson, G. Lucovsky, and H. Niimi, "Luminescence Measurements of Sub-Oxide Band-Tail and Amorphous Si Dangling Bond States at Ultrathin Si-SiO2 Interfaces," Proc. 1998 Intern. Conf. On Characterization and Metrology for ULSI Technol. (1998) p. 293.

9. A. P. Young, L.J.Brillson, and K. Aptowitz, "Cathodoluminescence Deep Level Spectroscopy of Etched and In-Situ Annealed 6H-SiC,"  Proceedings Materials Research Society (MRS Press, Warrendale, PA, 1998) 512, 137 (1998).

10. J. Schäfer, A. P. Young, L. J. Brillson, G. Lucovsky, and H. Niimi, "Defect Characterization of Ultrathin Plasma-Deposited Silicon Dioxide by Cathodoluminescence Spectroscopy," Proceedings Materials Research Society (MRS Press, Warrendale, PA, 1998) 525, 151 (1998).

11. A.P.Young, J. Schäfer, L. J. Brillson, Y.Yang, S.H.Xu, H. Crugeul, G.J.Lapeyre, M.A.L.Johnson and J. F. Schetzina, "Electronic Near-Surface Defect States of Bare and Metal Covered n-GaN Films Observed by Cathodoluminescence Spectroscopy," J. Electron. Mater. 28, 308-313 (1999).

12. J. Schäfer, A. P. Young, T. M. Levin, L. J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, "Cathodoluminescence Spectroscopy of Deep Defect Levels at the ZnSe/GaAs Interface with a Controlled Interfacial Layer," J. Electron. Mater. 28, 881-886 (1999).

13. R.Bandhu, J. Schäfer, A. P. Young, L. J. Brillson, G. Lucovsky, and H. Niimi, "Cathodoluminescence Spectroscopy of Nitrided Si-SiO2 Interfaces," J. Vac. Sci. Technol. A17, 1258 (1998).

14. J. Schäfer, A.P.Young, L.J.Brillson, H. Niimi, and G. Lucovsky, "Characterization of the Interface Between Plasma-Oxidized SiO2 and Crystalline Silicon by Cathodoluminescence Spectroscopy (CLS)," Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, Hiroshima, pp.134-135 (1998).

15. A.Hierro, D. Kwon, S.A.Ringel, L. J. Brillson, J.Schaefer. A.P.Young, and A. Franciosi, "Deep Level Characterization of Interface - Engineered ZnSe Layers on GaAs Grown by Molecular Beam Epitaxy," Proc. Materials Research Society (MRS Press, Warrendale, PA, 1999) 535, pp. 99-104.

16. T.M.Levin, L.J.Brillson, A. P. Young, J. Schäfer, J. D. MacKenzie, and C. R. Abernathy, "Low Energy Cathodoluminescence Spectroscopy of Erbium-Doped Gallium Nitride Surfaces," J. Vac. Sci. Technol. A17, 3437-3442 (1999).

17. A. Hierro, D. Kwon, S. H. Goss, L.J.Brillson, and S. A. Ringel, "Evidence for a Dominant Mid-Gap Trap in n-ZnSe Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 75, 832-834 (1999).

18. L.J.Brillson, A.P.Young, J. Schafer, H. Niimi, and G. Lucovsky, "Ultrathin Silicon Oxide and Nitride - Silicon Interface States," in Ultrathin SiO2 and High - K Materials for ULSI Gate Dielectrics, ed. H.R.Huff, M.L.Green, T.Hattori, G. Lucovsky, and C.A.Richter, Proc. Materials Research Society (MRS Press, Warrendale, PA, 1999) 567, pp. 549-558.

19. L.J.Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu, Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie,  "Localized States at GaN Surfaces, Schottky Barriers, and Quantum Well Interfaces," Materials Science and Engineering, B75, 218 (2000).

20. L.J.Brillson, A.P.Young, T. Levin, G. Jessen, C. Tu, Y.Naoi, F.Ponce, G.J.Lapeyre, Y.Yang, C.Abernathy, and D.McKenzie, "Defect Formation at GaN Surfaces and Interfaces," Physica B, 273-274, 70-74 (1999).

21. T.M.Levin, G.H.Jessen, F.A.Ponce, and L.J.Brillson, "Depth - Resolved Electron-Excited Nanoscale Luminescence Spectroscopy Studies of Defects Near GaN/InGaN/GaN Quantum Wells," J. Vac. Sci. Technol. B17, 2545-2552 (1999).

22. L.J.Brillson, T.M.Levin, G.H.Jessen, and F.A.Ponce, "Localized States at InGaN/GaN Quantum Well Interfaces," Appl. Phys. Lett. 75, 3835-3837 (1999).

23. A.P.Young, S.H.Goss, L.J.Brillson, J.D.MacKenzie, and C.R.Abernathy, "Low Energy Electron - Excited Nanoscale Luminescence Spectroscopy of Erbium Doped AlN," J. Electron. Mater. 29, 311-316 (2000).

24. A.P.Young, L.J.Brillson, Y. Naoi, and C.W.Tu, "The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates," MRS Internet J. Nitride Semicond. Res. 5S1, W11.56 (2000).

25. A.P.Young, L.Brillson, Y.Naoi, and C.W.Tu, "Chemical Composition, Morphology, and Deep Level Electronic States on GaN(0001) (1x1) Surfaces Prepared by In Decapping," J. Vac. Sci. Technol. , in press (2000).

26. L.J.Brillson, A.P.Young, B.D.White, J. Schaefer, H. Niimi, Y.M.Lee, and G. Lucovsky, "Depth - Resolved Detection and Process Dependence of Traps at Ultrathin Plasma - Oxidized and Deposited SiO2 / Si Interfaces," J. Vac. Sci. Technol. B18, 1737 (2000).

27. A. P.Young and L. J. Brillson, "Luminescence Spectroscopy in the High Temperature Regime from Room Temperature to 900 °C," Appl. Phys. Lett. 77, 699 (2000).

28. A.P.Young, J.Bae, L.J.Brillson, M.J.Murphy, and W.J.Schaff, "Depth-Resolved Spectroscopy of Interface Defects in AlGaN/GaN HFET Device Structures," J. Vac. Sci. Technol. B18, 2309 (2000).

29. S.T. Bradley, A.P. Young, L.J. Brillson, M.J. Murphy, W.J. Schaff, and L.F. Eastman, "Influence of AlGaN Deep Level Defects on AlGaN/GaN 2DEG Carrier Confinement," IEEE Trans. Electron. Dev. 48, 412 (2000).

30. S.H.Goss, A.P.Young, L.J.Brillson, D.C.Look, and R.J.Molnar, "Direct Observation of Bulk and Interface States in GaN on Sapphire grown by Hydride Vapor Phase Epitaxy," Materials Research Society Symposium Proceedings, Symposium G: GaN and Related Alloys-2000, ed. U. Mishra, M.S. Shur, C.M. Wetzel, B. Gil, and K. Kishino, (MRS, Pittsburgh, PA, 2001) Vol. 639, p. G3.59.

31. S. T. Bradley, A. P. Young, L.J. Brillson, M.J. Murphy, and W.J. Schaff, "Role of Barrier and Buffer Layer Defect States in AlGaN/GaN 2DEG HEMT Structures," J. Electron. Mater. 30, 123 (2000).

32. B.D. White, L.J. Brillson, S.C. Lee, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, Y.-M. Lee, and G. Lucovsky, "Low Energy Electron - Excited Nanoscale Luminescence: A Tool to Detect Trap Activation by Ionizing Radiation," IEEE Trans. Nuclear Sci., Proc. 37th Annual Int'l Nucl. Space Radiation Effects Conf., Vol. 47, No. 6, pp. 2276-2280, December, 2000.

33. L.J.Brillson, A.P.Young, G.H.Jessen, T.M.Levin, S.T.Bradley, S.H.Goss, and J.Bae, "Low Energy Electron-Excited Nano-Luminescence Spectroscopy of GaN Surfaces and Interfaces," Appl. Surf. Sci. 175-176, 442-449 (2001). [Invited]

34. S.H. Goss, S.S.K. Parkin, and L. J. Brillson, "Analysis of Tunneling Magnetoresistance Structures by Low Energy Electron Nanoscale Luminescence Spectroscopy," J. Vac. Sci. Technol. A19, 1199 (2001).

35. The following article appeared in Appl. Phys. Lett. 78 (23), 3630 (2001) and may be found at S. H. Goss et al., Appl. Phys. Lett. 78, 3630 (2001).
"Microcathodoluminescence of Impurity Doping at GaN/Sapphire Interfaces," S.H.Goss, X. Sun, L.J.Brillson, D.C.Look, and R.J.Molnar, Appl. Phys. Lett. 78 (23), 3630 (2001).
Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.  

36. L.J. Brillson, "Nanoscale Luminescence Spectroscopy of Defects at Buried Interfaces and Ultra-Thin Films," JVST B, v. 19 (5), p. 1762 (2001). [Invited]

37. R. Okojie, L. Brillson, S. Tumakha, G. Jessen, M. Xhang, and P. Pirouz, "Observation of 4H-SiC to 3C-SiC Polytipic Transformation During Oxidation," Appl. Phys.Lett., v. 79, pp. 3056-3058, November 2001.

38. X. L. Sun, S. H. Goss, L. J. Brillson, D.C. Look, and R.J. Molnar, "Electronic Defect States Observed by Cathodoluminescence Spectroscopy at GaN/Sapphire Interfaces," Phys. Stat. Sol., v. 228 (2), 441 (2001).

39. The following article appeared in J. Appl. Phys. and may be found at X. L. Sun et al., J. Appl. Phys. 91, 6729 (2002).
X. L. Sun, S. H. Goss, L. J. Brillson, D.C. Look, and R.J. Molnar, "Depth-Dependent Investigation of Defects and Impurity Doping in GaN/sapphire Using Scanning Electron Microscopy and Cathodoluminescence Spectroscopy," J. Appl. Phys., 91 (10), 6729 (2002).
Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.  

40. S. Tumakha, L.J. Brillson, G.H. Jessen, R.S. Okojie, D. Lukco, M. Zhang, P. Pirouz, "Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC," JVST B, 20:(2) pp. 554-560, (Mar. - Apr. 2002).

41. R.S. Okojie, M. Xhang, P. Pirouz, S. Tumakha, G. Jessen, and L.J. Brillson, "4H- to 3C-SiC Polytypic Transformation During Oxidation," Silicon Carbide and Related Materials 2001, Pts. 1 and 2, Proceedings, 389-3: 451-454, (2002).

42. R.S. Okojie, D. Lukco, L. Keys, S. Tumakha, and L. J. Brillson, "Surface Morphology and Chemistry of 4H- and 6H-SiC After Cyclic Oxidation," Silicon Carbide and Related Materials 2001, Pts. 1 and 2, Proceedings, 389-3: 1101-1104, (2002).

43. G. H. Jessen, B. D. White, S. T. Bradley, P. E. Smith, L. J. Brillson, J. E. Van Nostrand, R. Fitch, G. D. Via, J. K. Gillespie, R. W. Dettmer, and J. S. Sewell, "Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy," Sol. Stat. Elec. (46), 1427-1431, 2002.

44. B. D. White, M. Bataiev, L. J. Brillson, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, and S. T. Pantelides, "Detection of trap activation by ionizing radiation by spatially localized cathodoluminescence spectroscopy," J. Appl. Phys., accepted for publication.

45. B. D. White, M. Bataiev, L. J. Brillson, B. K. Choi, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. W. Dettmer, W. J. Schaff, J. G. Champlain, and U. K. Mishra, "Characterization of 1.8 MeV proton irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy," IEEE Trans. Nucl. Sci., to be published in Dec. 2002 issue.

46. Y. Koide, D. E. Walker Jr., B. D. White, L. J. Brillson, M. Murakami, S. Kamiyama, H. Amano, and I. Akasaki, "Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN," J. Appl. Phys., 92 (7), pp. 3657-3661, (2002).

47. L.J. Brillson, S.T. Bradley, S.H. Goss, X. Sun, M.J. Murphy, W.J. Schaff, L.F. Eastman, D.C. Look, R.J. Molnar, F.A. Ponce, N. Ikeo, and Y. Sakai, "Low-energy electron-excited nanoluminescence studies of GaN and related materials," Appl. Surf. Sci., v. 190, p. 498, (2002).

48. Y.M. Strzhemechny, P.E. Smith, S.T. Bradley, D.X. Liao, AA. Rockett, K. Ramanathan, and L.J. Brillson, "Near-surface electronic defects and morphology of CuIn1-xGaxSe2," JVST B, v. 20 (6), p. 2441 (2002).

49. J. Hwang, W.J. Schaff, L.F. Eastman, S.T. Bradley, L.J. Brillson, J. Wu, W. Walukiewicz, M. Furis, and A.N. Cartwright, "Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular beam epitaxy," Appl. Phys. Lett., v. 81 (27), p. 5192 (2002).

50. L.J. Brillson, S. Tumakha, G.H. Jessen, R.S. Okojie, M. Zhang, P. Pirouz, "Thermal and Doping Dependence of 4H-SiC Polytype Transformation," Appl. Phys. Lett., v. 81 (15), pp. 2785-2787 (Oct. 7, 2002).

51. Y. M. Strzhemechny, J. Nemergut, J. Bae, D. C. Look, Dayton, L. J. Brillson, "Effect of remote hydrogen plasma treatment on ZnO single crystal surfaces", Mat. Res. Soc. Symp. Proc. Series 744, M3.9.1 (2003).

52. A. Rockett, D. Liao, J. T. Heath, and J. D. Cohen, Y. M. Strzhemechny, L. J. Brillson, K. Ramanathan, and W. N. Shafarman, "Near-surface defect distribution in Cu(In,Ga)Se", Thin Solid Films 431-432, 301 (2003).

53. Y. M. Strzhemechny, J. Nemergut, P. E. Smith, J. Bae, D. C. Look, and L. J. Brillson, "Remote hydrogen plasma processing of ZnO single crystal surfaces", J. Appl. Phys. 94, 4257 (2003).

 

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